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HERA1601G - HERA1608G
16.0 AMPS. Glass Passivated High Efficient Rectifiers TO-220AC
.185(4.70) .175(4.44)
Features
Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application.
.113(2.87) .103(2.62)
.412(10.5) MAX
DIA .154(3.91) .148(3.74) .27(6.86) .23(5.84) .594(15.1) .587(14.9)
.055(1.40) .045(1.14)
PIN1 .16(4.06) .14(3.56)
2 .11(2.79) .10(2.54)
.56(14.22) .53(13.46) .037(0.94) .027(0.68)
Mechanical Data
Cases: TO-220AC Molded plastic Epoxy: UL 94V-0 rate flame retardant Terminals: Pure tin plated, lead free solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: 260oC/10 seconds .16",(4.06mm) from case. Weight: 2.24 grams
.205(5.20) .195(4.95)
.025(0.64) .014(0.35)
PIN 1 PIN 2 CASE
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @TC =100 oC Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @16.0A Maximum DC Reverse Current @TA=25 oC at Rated DC Blocking Voltage @ TA=125 oC Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Typical Thermal Resistance (Note 3) Operating Temperature Range
Symbol VRRM VRMS VDC I(AV) IFSM VF IR Trr
HERA HERA HERA HERA HERA HERA HERA HERA 1601G 1602G 1603G 1604G 1605G 1606G 1607G 1608G
Units
V V V A A
50 35 50
100 200 300 400 600 800 1000 70 140 210 280 420 560 700 100 200 300 400 600 800 1000 16 250 1.0 1.3 10 400 50 120 2.0 -65 to +150 -65 to +150 80 80 1.7
V uA uA nS pF o C/W o C o C
Cj
RJC
TJ
Storage Temperature Range TSTG 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Notes: 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D. C. 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.
- 336 -
Version: B07
RATINGS AND CHARACTERISTIC CURVES (HERA1601G THRU HERA1608G)
AVERAGE FORWARD CURRENT. (A)
FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE
20 16 12 8 4 0 0 50 CASE TEMPERATURE. ( C)
o
FIG.2- TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS REVERSE CURRENT. ( A)
100
Tj=125 0C
10
100
150
Tj=25 0C
PEAK FORWARD SURGE CURRENT. (A)
FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
250
Tj=25 0C 8.3ms Single Half Sine Wave JEDEC Method
1
200 150 100
0.1 0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLT AGE. (%)
FIG.5- TYPICAL FORWARD CHARACTERISTICS
50 0 100
INSTANTANEOUS FORWARD CURRENT. (A)
03
G
1
2
5
10
20
50
100
30 10
G~ HE RA 16
16
05
NUMBER OF CYCLES AT 60Hz
G
G
04 G
01
HE RA 16
RA
JUNCTION CAPACITANCE.(pF)
200 150 100 50 0 1 2
HE
RA
16
0.3 0.1
01
HE
G~
RA
HE
16
RA
06
G~
16
05
HE
G
RA
16
0.03
08 G
5
10
20
50
100
200
500
1000
0.01 0.4
0.6
0.8
HE
RA
Tj=25 0C
16
250
1.0
06
1.0
HE
G~
HE
300
16
RA
3.0
16
1.2
08
FIG.4- TYPICAL JUNCTION CAPACIT ANCE
~H
A ER
1.4
1.6
1.8
REVERSE VOLTAGE. (V)
FORWARD VOLT AGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr
NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms
-1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm
Version: B07

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